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ShenZhen QingFengYuan Technology Co.,Ltd.

VS-3C10ET07S2L-M3

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Description: 650 V POWER SIC GEN 3 MERGED PIN

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Podkreślić:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
55 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 10 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
-
Capacitance @ Vr, F:
445pF @ 1V, 1MHz
Supplier Device Package:
TO-263AB (D²PAK)
Reverse Recovery Time (trr):
0 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
VS-3C10
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
55 µA @ 650 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 10 A
Package:
Tape & Reel (TR) Cut Tape (CT) Digi-Reel®
Series:
-
Capacitance @ Vr, F:
445pF @ 1V, 1MHz
Supplier Device Package:
TO-263AB (D²PAK)
Reverse Recovery Time (trr):
0 ns
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
SiC (Silicon Carbide) Schottky
Operating Temperature - Junction:
-55°C ~ 175°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
650 V
Current - Average Rectified (Io):
10A
Speed:
No Recovery Time > 500mA (Io)
Base Product Number:
VS-3C10
VS-3C10ET07S2L-M3
Dioda 650 V 10A na powierzchni TO-263AB (D2PAK)