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ShenZhen QingFengYuan Technology Co.,Ltd.

G3S06510B

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Description: SIC SCHOTTKY DIODE 650V 10A 3-PI

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Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
27A (DC)
Operating Temperature - Junction:
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 5 A
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247AB
Reverse Recovery Time (trr):
0 ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
Category:
Discrete Semiconductor Products Diodes Rectifiers Diode Arrays
Product Status:
Active
Current - Average Rectified (Io) (per Diode):
27A (DC)
Operating Temperature - Junction:
-55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 5 A
Package:
Cut Tape (CT) Tape & Box (TB)
Series:
-
Diode Configuration:
1 Pair Common Cathode
Supplier Device Package:
TO-247AB
Reverse Recovery Time (trr):
0 ns
Mfr:
Global Power Technology-GPT
Technology:
SiC (Silicon Carbide) Schottky
Package / Case:
TO-247-3
Voltage - DC Reverse (Vr) (Max):
650 V
Mounting Type:
Through Hole
Speed:
No Recovery Time > 500mA (Io)
Current - Reverse Leakage @ Vr:
50 µA @ 650 V
G3S06510B
Diody 1 para Katoda wspólna 650 V 27A (DC) przez otwór TO-247-3