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ShenZhen QingFengYuan Technology Co.,Ltd.

PR1006G-T

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Description: DIODE GEN PURP 800V 1A DO41

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Podkreślić:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status produktu:
Aktywny
Current - Reverse Leakage @ Vr:
5 µA @ 800 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 1 A
Package:
Tape & Reel (TR)
Zestaw:
-
Pojemność @ Vr, F:
8 pF przy 4 V, 1 MHz
Supplier Device Package:
DO-41
Reverse Recovery Time (trr):
500 ns
Mfr:
Diodes Incorporated
technologii:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
DO-204AL, DO-41, Axial
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Status produktu:
Aktywny
Current - Reverse Leakage @ Vr:
5 µA @ 800 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.3 V @ 1 A
Package:
Tape & Reel (TR)
Zestaw:
-
Pojemność @ Vr, F:
8 pF przy 4 V, 1 MHz
Supplier Device Package:
DO-41
Reverse Recovery Time (trr):
500 ns
Mfr:
Diodes Incorporated
technologii:
Standard
Operating Temperature - Junction:
-65°C ~ 150°C
Package / Case:
DO-204AL, DO-41, Axial
Voltage - DC Reverse (Vr) (Max):
800 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
PR1006G-T
Dioda 800 V 1A przez otwór DO-41