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ShenZhen QingFengYuan Technology Co.,Ltd.

VS-10ETS12STRR-M3

Szczegóły produktu

Warunki płatności i wysyłki

Description: DIODE GEN PURP 1.2KV 10A TO263AB

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Podkreślić:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 10 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-263AB (D²PAK)
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
10ETS12
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
50 µA @ 1200 V
Mounting Type:
Surface Mount
Voltage - Forward (Vf) (Max) @ If:
1.1 V @ 10 A
Package:
Tape & Reel (TR)
Series:
-
Capacitance @ Vr, F:
-
Supplier Device Package:
TO-263AB (D²PAK)
Mfr:
Vishay General Semiconductor - Diodes Division
Technology:
Standard
Operating Temperature - Junction:
-40°C ~ 150°C
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
10A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Base Product Number:
10ETS12
VS-10ETS12STRR-M3
Dioda 1200 V 10A na powierzchni TO-263AB (D2PAK)