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ShenZhen QingFengYuan Technology Co.,Ltd.

1N5623/TR

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Description: DIODE GEN PURP 1KV 1A

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Podkreślić:
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 1 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Pakiet:
Taśma i rolka (TR)
Series:
-
Capacitance @ Vr, F:
15pF @ 12V, 1MHz
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
500 ns
Mfr:
Microchip Technology
Technology:
Standard
Temperatura robocza — złącze:
-65°C ~ 175°C
Opakowanie / Pudełko:
A, osiowy
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Category:
Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Product Status:
Active
Current - Reverse Leakage @ Vr:
500 nA @ 1 V
Mounting Type:
Through Hole
Voltage - Forward (Vf) (Max) @ If:
1.6 V @ 3 A
Pakiet:
Taśma i rolka (TR)
Series:
-
Capacitance @ Vr, F:
15pF @ 12V, 1MHz
Supplier Device Package:
A, Axial
Reverse Recovery Time (trr):
500 ns
Mfr:
Microchip Technology
Technology:
Standard
Temperatura robocza — złącze:
-65°C ~ 175°C
Opakowanie / Pudełko:
A, osiowy
Voltage - DC Reverse (Vr) (Max):
1000 V
Current - Average Rectified (Io):
1A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
1N5623/TR
Dioda 1000 V 1A przez otwór A, osialna